Vertically coupled InP/InGaAsP microring lasers using a single epitaxial growth and singleside lithography
Fecha
2020Autor
Versión
Acceso abierto / Sarbide irekia
Tipo
Artículo / Artikulua
Versión
Versión aceptada / Onetsi den bertsioa
Identificador del proyecto
ES/1PE/TEC2016-76021
Impacto
|
10.1109/JLT.2020.2983463
Resumen
The experimental demonstration of vertical microring lasers requiring only one single epitaxial growth and two single-side lithographic steps is presented, in what is the simplest fabrication scheme for such devices published to date. The fabricated lasers show series resistance of around 20 Ω at forward bias, threshold currents at room temperature between 35 and 58 mA, and single-mode emission w ...
[++]
The experimental demonstration of vertical microring lasers requiring only one single epitaxial growth and two single-side lithographic steps is presented, in what is the simplest fabrication scheme for such devices published to date. The fabricated lasers show series resistance of around 20 Ω at forward bias, threshold currents at room temperature between 35 and 58 mA, and single-mode emission with a side-lobe
suppression ratio higher than 30 dB. The measured optic output power level is of tens of microwatts. The approach allows the improvement of the optical features maintaining the simplicity of the manufacturing procedure. [--]
Materias
Integrated optics,
Semiconductor waveguides,
Semiconductor lasers,
Ring lasers
Editor
IEEE
Publicado en
Journal of Lightwave Technology, 2020
Departamento
Universidad Pública de Navarra. Departamento de Ingeniería Eléctrica, Electrónica y de Comunicación /
Nafarroako Unibertsitate Publikoa. Ingeniaritza Elektrikoa, Elektronikoa eta Telekomunikazio Ingeniaritza Saila
Versión del editor
Entidades Financiadoras
This work was supported by the Spanish Agencia Estatal de Investigación within project TEC2016-76021-C2-1-R, and FEDER funds of EU.