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Characterization of RF-MOSFETs in common-source configuration at different source-to-bulk voltages from S-parameters
(IEEE, 2013)
Artículo / Artikulua,
Using a new test fixture that allows us to bias the bulk terminal through an additional compensated DC probe, a two-port S-measurement-based methodology to characterize RF-MOSFETs in common-source configuration is herein ...