Álvarez Botero, Germán Andrés

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https://academica-e.unavarra.es/handle/2454/50616

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Álvarez Botero

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Germán Andrés

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Ingeniería Eléctrica, Electrónica y de Comunicación

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ISC. Institute of Smart Cities

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0000-0002-1143-6104

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751433

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811966

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20131
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Author: Álvarez Botero, Germán Andrés × Subject: RF-MOSFET ×

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    PublicationOpen Access
    Characterization of RF-MOSFETs in common-source configuration at different source-to-bulk voltages from S-parameters
    (IEEE, 2013) Zárate-Rincón, Fabián; Álvarez Botero, Germán Andrés; Torres-Torres, Reydezel; Murphy-Arteaga, Roberto S.; Decoutere, Stefaan; Ingeniería Eléctrica y Electrónica; Ingeniaritza Elektrikoa eta Elektronikoa
    Using a new test fixture that allows us to bias the bulk terminal through an additional compensated DC probe, a two-port S-measurement-based methodology to characterize RF-MOSFETs in common-source configuration is herein presented. In addition to obtaining S-parameters at different bulk-to-source voltages using a single two-port configured test-fixture, the proposal allows the analysis of the electrical parameters of a MOSFET that are influenced by the substrate effect when the frequency rises. Physically expected results are obtained for device's model parameters, allowing to accurately reproduce S-parameters up to 20 GHz. Furthermore, extracted parameters, such as threshold voltage, are in agreement with those obtained using well-established DC methods. This method allows one to characterize a four-terminal MOSFET from two-port small-signal measurements.