Álvarez Botero, Germán Andrés

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https://academica-e.unavarra.es/handle/2454/50616

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Álvarez Botero

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Germán Andrés

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Ingeniería Eléctrica, Electrónica y de Comunicación

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ISC. Institute of Smart Cities

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0000-0002-1143-6104

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751433

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811966

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2013 - 201912020 - 20241
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Subject: S-parameters ×

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Now showing 1 - 2 of 2
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    PublicationOpen Access
    Assessment of performance of one-turn inductors in series configuration through a transmission-line modeling approach
    (IEEE , 2024) Álvarez Botero, Germán Andrés; Moctezuma-Pascual, Eduardo; Gómez Laso, Miguel Ángel; Torres-Torres, Reydezel; Ingeniería Eléctrica, Electrónica y de Comunicación; Ingeniaritza Elektrikoa, Elektronikoa eta Telekomunikazio Ingeniaritza
    In this paper, transmission-line theory is applied to implement a physical model for compact one-turn inductors, which simultaneously incorporates the frequency-dependent effects introduced by the conductor skin effect and the loss originated by the coupling with the ground plane. For this purpose, S-parameter measurements are processed to extract the associated parameters, which exhibit scalability with the turn radius. This allows the model to be used for interpolation and extrapolation analyses. In this regard, the device performance is assessed for one-turn inductors in series connection, for different load impedances, and when the turn is narrowed. To validate the proposal, agreement between the model and the experimental transmission line RLGC parameters, the return loss, and the Q-factor is obtained up to 20 GHz.
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    PublicationOpen Access
    Modeling and parameter extraction of test fixtures for MOSFET on-wafer measurements up to 60 GHz
    (Wiley, 2013) Álvarez Botero, Germán Andrés; Torres-Torres, Reydezel; Murphy-Arteaga, Roberto S.; Ingeniería Eléctrica y Electrónica; Ingeniaritza Elektrikoa eta Elektronikoa
    We present a circuit model and parameter determination methodology for test fixtures used for on-wafer S-parameter measurements on CMOS devices. The model incorporates the frequency dependence of the series resistances and inductances due to the skin effect occurring in the metal pads. Physically based representations for this effect allow for excellent theory-experiment correlations for different dummy structures, as well as when de-embedding transistor measurements up to 60 GHz.