Navajas Hernández, David
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Navajas Hernández
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David
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Ingeniería Eléctrica, Electrónica y de Comunicación
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Publication Open Access Exploring surface roughness in epsilon-near-zero materials(IEEE, 2024-10-08) Navajas Hernández, David; Pérez Escudero, José Manuel; Liberal Olleta, Íñigo; Ingeniería Eléctrica, Electrónica y de Comunicación; Ingeniaritza Elektrikoa, Elektronikoa eta Telekomunikazio Ingeniaritza; Institute of Smart Cities - ISCThe practical application of materials with epsilon-near-zero (ENZ) characteristics heavily depends on the quality of real-world ENZ materials, considering factors like material losses and surface roughness. These materials have drawn interest due to their strong nonlinear responses and unique behavior. In this study, an experimental examination of how surface roughness affects ENZ substrates is presented. We employed silicon carbide (SiC) substrates deliberately engineered to exhibit different levels of roughness, enabling us to analyze samples spanning from a few to hundreds of nanometers in size scales. Substrates with nanoscale roughness experience adverse effects due to longitudinal phonon coupling and strong ENZ fields, while at larger roughness scales, the ENZ band demonstrates to be more robust compared to dielectric and surface phonon polariton (SPhP) bands.Publication Open Access Surface roughness effects on ENZ media IR spectra(IEEE, 2023-09-04) Navajas Hernández, David; Pérez Escudero, José Manuel; Liberal Olleta, Íñigo; Ingeniería Eléctrica, Electrónica y de Comunicación; Ingeniaritza Elektrikoa, Elektronikoa eta Telekomunikazio Ingeniaritza; Institute of Smart Cities - ISCThe development of high-performance nanophotonic technologies faces challenges like material losses and surface roughness. While surface roughness has been studied in the plasmonic regime, its effect on epsilon-near-zero (ENZ) media has been less explored. Two theoretical scenarios arise regarding roughness in ENZ media: one predicts the excitation of a strong longitudinal electric field, while the other suggests minimal changes in reflection due to the large effective wavelength. This study investigates silicon carbide (SiC) as an ENZ substrate, using deep reactive ion etching (DRIE) to create significant surface roughness. The findings show that surface roughness affects the reflection spectra, induces polaritonic effects, and highlights the robustness of SiC against surface roughness. Numerical simulations and experimental measurements confirm these results, revealing that ENZ substrates maintain their reflective properties even with surface roughness on the scale of hundreds of nanometers.