García Solano, Miguel

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https://academica-e.unavarra.es/handle/2454/49110

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García Solano

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Miguel

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Ingeniería Eléctrica, Electrónica y de Comunicación

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ISC. Institute of Smart Cities

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0000-0001-5727-0771

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88709

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8598

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Author: Berrueta Irigoyen, Alberto × Subject: Crystalline silicon ×

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    PublicationOpen Access
    On the on-site measurement of the degradation rate of crystalline silicon PV modules at plant level
    (IEEE, 2018) Pascual Miqueleiz, Julio María; Berrueta Irigoyen, Alberto; Marcos Álvarez, Javier; García Solano, Miguel; Marroyo Palomo, Luis; Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren; Institute of Smart Cities - ISC; Ingeniería Eléctrica, Electrónica y de Comunicación
    This paper proposes a method for measuring the degradation rate of crystalline silicon PV modules at plant level in two different ways as a form of verification. As actual levels of degradation rate have been observed to be as low as 0.2%/a, the uncertainties make it difficult to measure this value accurately at plant level. However, despite the low value, it is still important to know the actual degradation rate due to its impact on energy yield. In this paper, two ways of measuring the degradation rate at plant level are proposed. These two methods, with different uncertainty sources, are proposed to be used jointly in order to have a better approach to the real value. Finally, an example of measurement in a 1.78 MW PV plant is presented.