Person:
López Martín, Antonio

person.page.identifierURI

https://academica-e.unavarra.es/handle/2454/49446

Last Name

López Martín

First Name

Antonio

person.page.departamento

Ingeniería Eléctrica, Electrónica y de Comunicación

person.page.instituteName

ISC. Institute of Smart Cities

ORCID

0000-0001-7629-0305

person.page.upna

2254

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Now showing 1 - 10 of 13

Open Access
Low-voltage 0.81mW, 1-32 CMOS VGA with 5% bandwidth variations and -38dB DC rejection
(IEEE, 2020) López Martín, Antonio; Rico-Aniles, Héctor Daniel; Ramírez-Angulo, Jaime; Rocha-Pérez, José Miguel; González Carvajal, Ramón; Institute of Smart Cities - ISC
A CMOS low-voltage amplifier with approximately constant bandwidth and DC rejection is introduced. The design is based on the cascade of a wide linear input range OTA, an op-amp and a servo-loop with extremely large time constants. It operates with +/-0:45V supplies and a power consumption of 0.81mW in 180nm technology. The bandwidth changes only from 9.08MHz to 9.54MHz over a gain range from 1 to 32, it has a 9.8Hz low cutoff frequency and a DC attenuation of 38dBs. DC floating voltage sources are used to keep the gates of all differential pairs at a constant value close to a supply rail in order to operate the amplifier circuit with minimum supply voltage. The proposed circuit has small and large signal figures of merit FOMSS=5380 (MHz*pF/mW) and FOMLS=0:0085((V/ns)*pF/mA) for a nominal gain A=32.
Open Access
Class AB amplifier with enhanced slew rate and GBW
(John Wiley & Sons, 2019) Garde Luque, María Pilar; López Martín, Antonio; Algueta-Miguel, Jose M.; Ramírez-Angulo, Jaime; González Carvajal, Ramón; Ingeniería Eléctrica y Electrónica; Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren
The design of a micropower class AB operational transconductance amplifier with large dynamic current to quiescent current ratio is addressed. It is based on a compact and power-efficient adaptive biasing circuit and a class AB current follower using the Quasi-Floating Gate (QFG) technique. The amplifier has been designed and fabricated in a 0.5 um CMOS process. Simulation and measurement results show a slew rate (SR) improvement factor versus the class A version larger than 4 for the same supply voltage and bias currents, as well as enhanced small-signal performance.
Open Access
Super-gain-boosted miller op-amp based on nested regulated cascode techniques with FoMAOLDC =24,614kV/V.MHz.pF/µWatt
(IEEE, 2020) Paul, Anindita; Ramírez-Angulo, Jaime; López Martín, Antonio; González Carvajal, Ramón; Díaz Sánchez, Alejandro; Ingeniería Eléctrica, Electrónica y de Comunicación; Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren
A simple technique to greatly enhance the DC open-loop gain of a Miller op-amp is introduced here. It is based on the utilization of nested regulated cascode amplifiers. It uses conventional Miller compensation and does not increase the supply voltage. The proposed scheme has a DC open-loop gain Figure of Merit FoMAOLDC=24,614kV/V.pF.MHz/µWatt. It is especially appropriate for utilization in modern deep sub-micrometer CMOS technologies with low intrinsic gain.
Open Access
Super-gain-boosted AB-AB fully differential Miller op-amp with 156dB open-loop gain and 174MV/V MHZ pF/uW figure of merit in 130nm CMOS technology
(IEEE, 2021) Paul, Anindita; Ramírez-Angulo, Jaime; Díaz Sánchez, Alejandro; López Martín, Antonio; González Carvajal, Ramón; Li, Frank X.; Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren; Institute of Smart Cities - ISC; Ingeniería Eléctrica, Electrónica y de Comunicación
A fully differential Miller op-amp with a composite input stage using resistive local common-mode feedback and regulated cascode transistors is presented here. High gain pseudo-differential auxiliary amplifiers are used to implement the regulated cascode transistors in order to boost the output impedance of the composite input stage and the open-loop gain of the op-amp. Both input and output stages operate in class AB mode. The proposed op-amp has been simulated in a 130nm commercial CMOS process technology. It operates from a 1.2V supply and has a close to rail-to-rail differential output swing. It has 156dB DC open-loop gain and 63MHz gain-bandwidth product with a 30pF capacitive load. The op-amp has a DC open-loop gain figure of merit FOMAOLDC of 174 (MV/V) MHz pF/uW and large-signal figure of merit FOMLS of 3(V/us) pF/uW.
Open Access
A highly efficient composite class-AB–AB Miller op-amp with high gain and stable from 15 pF up to very large capacitive loads
(IEEE, 2018) Pourashraf, Shirin; Ramírez-Angulo, Jaime; López Martín, Antonio; González Carvajal, Ramón; Ingeniería Eléctrica, Electrónica y de Comunicación; Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren
In this paper, a highly power-efficient class-AB–AB Miller op-amp is discussed. The structure uses gm enhancement based on local common-mode feedback to provide class-AB operation with enhanced effective gm , open-loop gain, unity-gain frequency, and slew rate ( SR ) without significant increase in quiescent power consumption. Utilization of a nonlinear load leads to large symmetric positive and negative SRs . Stability over an extremely wide range of capacitive loads is achieved through a combination of Miller and phase-lead compensations. The unity-gain frequency does not show sensitivity to capacitive load values. A test chip prototype fabricated in 0.18- μm CMOS technology shows 90.8-dB open-loop gain, 12.5-MHz bandwidth for a 25-pF load capacitance, and a factor 60 SR enhancement with maximum output current close to 1-mA and 43- μA total static current.
Open Access
Pseudo-three-stage Miller op-amp with enhanced small-signal and large-signal performance
(IEEE, 2019) Paul, Anindita; Ramírez-Angulo, Jaime; López Martín, Antonio; González Carvajal, Ramón; Rocha-Pérez, José Miguel; Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren; Institute of Smart Cities - ISC; Ingeniería Eléctrica, Electrónica y de Comunicación
A simple technique to implement highly power efficient class AB-AB Miller op-amps is presented in this paper. It uses a composite input stage with resistive local common mode feedback that provides class AB operation to the input stage and essentially enhances the op-amp's effective transconductance gain, the dc open-loop gain, the gain-bandwidth product, and slew rate with just moderate increase in power dissipation. The experimental results of op-amps in strong inversion and subthreshold fabricated in a 130-nm standard CMOS technology validate the proposed approach. The op-amp has 9 V·pF/μs·μW large-signal figure of merit (FOM) and 17 MHz · pF/μW small-signal FOM with 1.2-V supply voltage. In subthreshold, the op-amp has 10 V · pF/μs · μW large-signal FOM and 92 MHz · pF/μW small-signal FOM with 0.5-V supply voltage.
Open Access
±0.3v bulk-driven fully differential buffer with high figures of merit
(MDPI, 2022) Gangineni, Manaswini; Ramírez-Angulo, Jaime; Vázquez-Leal, Héctor; Huerta-Chua, Jesús; López Martín, Antonio; González Carvajal, Ramón; Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren; Institute of Smart Cities - ISC; Ingeniería Eléctrica, Electrónica y de Comunicación
A high performance bulk-driven rail-to-rail fully differential buffer operating from ±0.3V supplies in 180 nm CMOS technology is reported. It has a differential–difference input stage and common mode feedback circuits implemented with no-tail, high CMRR bulk-driven pseudo-differential cells. It operates in subthreshold, has infinite input impedance, low output impedance (1.4 kΩ), 86.77 dB DC open-loop gain, 172.91 kHz bandwidth and 0.684 µWstatic power dissipation with a 50-pF load capacitance. The buffer has power efficient class AB operation, a small signal figure of merit FOMss = 12.69 MHzpFµW-1, a large signal figure of merit FOMls = 34.89 (V/µs) pFµW-1, CMRR = 102 dB, PSRR+ = 109 dB, PSRR- = 100 dB, 1.1 µV/√Hz input noise spectral density, 0.3 mVrms input noise and 3.5 mV input DC offset voltage.
Open Access
CMOS first-order all-pass filter with 2-Hz pole frequency
(IEEE, 2019) Paul, Anindita; Ramírez-Angulo, Jaime; López Martín, Antonio; González Carvajal, Ramón; Ingeniería Eléctrica, Electrónica y de Comunicación; Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren
A CMOS fully integrated all-pass filter with an extremely low pole frequency of 2 Hz is introduced in this paper. It has 0.08-dB passband ripple and 0.029-mm2 Si area. It has 0.38-mW power consumption in strong inversion with ±0.6-V power supplies. In subthreshold, it has 0.64-uW quiescent power and operates with ±200-mV dc supplies. Miller multiplication is used to obtain a large equivalent capacitor without excessive Si area. By varying the gain of the Miller amplifier, the pole frequency can be varied from 2 to 48 Hz. Experimental and simulation results of a test chip prototype in 130-nm CMOS technology validate the proposed circuit.
Open Access
Energy-efficient amplifiers based on quasi-floating gate techniques
(MDPI, 2021) López Martín, Antonio; Garde Luque, María Pilar; Algueta-Miguel, Jose M.; Beloso Legarra, Javier; González Carvajal, Ramón; Ramírez-Angulo, Jaime; Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren; Institute of Smart Cities - ISC; Ingeniería Eléctrica, Electrónica y de Comunicación
Energy efficiency is a key requirement in the design of amplifiers for modern wireless applications. The use of quasi-floating gate (QFG) transistors is a very convenient approach to achieve such energy efficiency. We illustrate different QFG circuit design techniques aimed to implement low-voltage energy-efficient class AB amplifiers. A new super class AB QFG amplifier is presented as a design example including some of the techniques described. The amplifier has been fabricated in a 130 nm CMOS test chip prototype. Measurement results confirm that low-voltage ultra low power amplifiers can be designed preserving at the same time excellent small-signal and large-signal performance.
Open Access
±0.25 V Class-AB CMOS capacitance multiplier and precision rectifiers
(IEEE, 2019) Pourashraf, Shirin; Ramírez-Angulo, Jaime; Hinojo Montero, José María; González Carvajal, Ramón; López Martín, Antonio; Ingeniería Eléctrica y Electrónica; Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren
Reduction of minimum supply requirements is a crucial aspect to decrease the power consumption in VLSI systems. A high performance capacitance multiplier able to operate with supplies as low as ±0.25 V is presented. It is based on adaptively biased class-AB current mirrors which provide high current efficiency. Measurement results of a factor 11 capacitance multiplier fabricated in 180 nm CMOS technology verify theoretical claims. Moreover, low-voltage precision rectifiers based on the same class-AB current mirrors are designed and fabricated in the same CMOS process. They generate output currents over 100 times larger than the quiescent current. Both proposed circuits have 300 nW static power dissipation when operating with ±0.25 V supplies.