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Algueta-Miguel, Jose M.

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Algueta-Miguel

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Jose M.

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Ingeniería Eléctrica, Electrónica y de Comunicación

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0000-0001-9323-4516

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8574

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Now showing 1 - 4 of 4
  • PublicationOpen Access
    Energy-efficient amplifiers based on quasi-floating gate techniques
    (MDPI, 2021) López Martín, Antonio; Garde Luque, María Pilar; Algueta-Miguel, Jose M.; Beloso Legarra, Javier; González Carvajal, Ramón; Ramírez-Angulo, Jaime; Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren; Institute of Smart Cities - ISC; Ingeniería Eléctrica, Electrónica y de Comunicación
    Energy efficiency is a key requirement in the design of amplifiers for modern wireless applications. The use of quasi-floating gate (QFG) transistors is a very convenient approach to achieve such energy efficiency. We illustrate different QFG circuit design techniques aimed to implement low-voltage energy-efficient class AB amplifiers. A new super class AB QFG amplifier is presented as a design example including some of the techniques described. The amplifier has been fabricated in a 130 nm CMOS test chip prototype. Measurement results confirm that low-voltage ultra low power amplifiers can be designed preserving at the same time excellent small-signal and large-signal performance.
  • PublicationOpen Access
    Class AB amplifier with enhanced slew rate and GBW
    (John Wiley & Sons, 2019) Garde Luque, María Pilar; López Martín, Antonio; Algueta-Miguel, Jose M.; Ramírez-Angulo, Jaime; González Carvajal, Ramón; Ingeniería Eléctrica y Electrónica; Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren
    The design of a micropower class AB operational transconductance amplifier with large dynamic current to quiescent current ratio is addressed. It is based on a compact and power-efficient adaptive biasing circuit and a class AB current follower using the Quasi-Floating Gate (QFG) technique. The amplifier has been designed and fabricated in a 0.5 um CMOS process. Simulation and measurement results show a slew rate (SR) improvement factor versus the class A version larger than 4 for the same supply voltage and bias currents, as well as enhanced small-signal performance.
  • PublicationOpen Access
    1-V 15-μW 130-nm CMOS super class AB OTA
    (IEEE, 2020) López Martín, Antonio; Algueta-Miguel, Jose M.; Garde Luque, María Pilar; Carvajal, Ramón G.; Ramírez-Angulo, Jaime; Institute of Smart Cities - ISC
    A super class AB recycling folded cascode amplifier in 130 nm CMOS is presented. It combines for the first time adaptive biasing of the differential input pair, nonlinear current mirrors with current starving and dynamic biasing of the cascode transistors in the output branch. Measurements using a ±0.5V supply show slew rate and gain bandwidth product improvement factors of 26 and 112 versus the conventional topology for the same bias currents, yielding the highest combined FoM to date.
  • PublicationOpen Access
    Enhanced single-stage folded cascode OTA suitable for large capacitive loads
    (IEEE, 2018) López Martín, Antonio; Garde Luque, María Pilar; Algueta-Miguel, Jose M.; Cruz Blas, Carlos Aristóteles de la; Carvajal, Ramón G.; Ramírez-Angulo, Jaime; Institute of Smart Cities - ISC
    An enhanced single-stage folded cascode operational transconductance amplifier able to drive large capacitive loads is presented. Circuits that adaptively bias the input differential pair and the current folding stage are employed, which provide class AB operation with dynamic current boosting and increased gainbandwidth (GBW) product. Measurement results of a test chip prototype fabricated in a 0.5-µm CMOS process show an increase in slew rate and GBW by a factor of 30 and 15, respectively, versus the class A version using the same supply voltage and bias currents. Overhead in other performance metrics is small.