High-linearity tunable low-Gm transconductor based on bootstrapping

Date

2021

Authors

Cinco-Izquierdo, Óscar J.
Sanz-Pascual, M. Teresa

Director

Publisher

IEEE
Acceso abierto / Sarbide irekia
Artículo / Artikulua
Versión aceptada / Onetsi den bertsioa

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Impacto

Abstract

In this brief, a novel pseudo-differential low-transconductance amplifier is proposed based on the bootstrapping technique. The transconductor is implemented using two voltage follower topologies as amplifiers with their outputs connected to both terminals of a resistor, thus bootstrapping the voltages at these terminals to increase the equivalent resistance value, and achieve a very low transconductance without the need for large passive components. In this way, a highly-linear compact structure is designed whose transconductance can be tuned by external current sources. The circuit was fabricated in a standard 0.18μm CMOS process. The experimental results show a tunable transconductance in the range of tens of nA/V, with a total harmonic distortion lower than -40dB at 350mVpp@1kHz. The power consumption of the amplifier is 4μW under a 1.8V supply voltage.

Description

Keywords

Analog CMOS, Bootstrapping, Current mirrors, Linearity, Low Gm OTA., Power demand, Resistance, Resistors, Transconductance, Transistors

Department

Ingeniería Eléctrica, Electrónica y de Comunicación / Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren

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item.page.cita

O. J. Cinco-Izquierdo, C. A. de la Cruz-Blas and M. T. Sanz-Pascual, "High-Linearity Tunable Low-Gm Transconductor based on Bootstrapping," in IEEE Transactions on Circuits and Systems II: Express Briefs, doi: 10.1109/TCSII.2021.3090983.

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