Álvarez Botero, Germán AndrésTorres-Torres, ReydezelMurphy-Arteaga, Roberto S.2024-02-122024-02-122013Álvarez-Botero, G., Torres-Torres, R., Murphy-Arteaga, R. S. (2013) Modeling and parameter extraction of test fixtures for MOSFET on-wafer measurements up to 60 GHz. International Journal of RF and Microwave Computer-Aided Engineering, 23(6), 655-661. https://doi.org/10.1002/mmce.20701.1096-429010.1002/mmce.20701https://academica-e.unavarra.es/handle/2454/47472We present a circuit model and parameter determination methodology for test fixtures used for on-wafer S-parameter measurements on CMOS devices. The model incorporates the frequency dependence of the series resistances and inductances due to the skin effect occurring in the metal pads. Physically based representations for this effect allow for excellent theory-experiment correlations for different dummy structures, as well as when de-embedding transistor measurements up to 60 GHz.application/pdfeng© 2012 Wiley Periodicals, Inc.RF-measurementsS-parametersTest fixturesEquivalent circuit modelingCMOSdevicesinfo:eu-repo/semantics/article2024-02-12info:eu-repo/semantics/openAccess