García López, ÓscarThourhout, Dries VanVerstuyft, StevenLópez-Amo Sáinz, ManuelBaets, RoelGalarza Galarza, Marko2020-07-092021-03-302020O. García, D. Van Thourhout, S. Verstuyft, M. Lopez-Amo, R. Baets and M. Galarza, 'Vertically coupled InP/InGaAsP microring lasers using a single epitaxial growth and single-side lithography,' in Journal of Lightwave Technology, doi: 10.1109/JLT.2020.2983463.1558-221310.1109/JLT.2020.2983463https://academica-e.unavarra.es/handle/2454/37324The experimental demonstration of vertical microring lasers requiring only one single epitaxial growth and two single-side lithographic steps is presented, in what is the simplest fabrication scheme for such devices published to date. The fabricated lasers show series resistance of around 20 Ω at forward bias, threshold currents at room temperature between 35 and 58 mA, and single-mode emission with a side-lobe suppression ratio higher than 30 dB. The measured optic output power level is of tens of microwatts. The approach allows the improvement of the optical features maintaining the simplicity of the manufacturing procedure.4 p.application/pdfeng© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work.Integrated opticsSemiconductor waveguidesSemiconductor lasersRing lasersinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/openAccess