Pascual Miqueleiz, Julio MaríaBerrueta Irigoyen, AlbertoMarcos Álvarez, JavierGarcía Solano, MiguelMarroyo Palomo, Luis2020-01-272020-01-272018J. Pascual, A. Berrueta, J. Marcos, M. García and L. Marroyo, 'On the On-Site Measurement of the Degradation Rate of Crystalline Silicon PV Modules at Plant Level,' 2018 IEEE International Conference on Environment and Electrical Engineering and 2018 IEEE Industrial and Commercial Power Systems Europe (EEEIC / I&CPS Europe), Palermo, 2018, pp. 1-5. doi: 10.1109/EEEIC.2018.8493718978-1-5386-5185-810.1109/EEEIC.2018.8493718https://academica-e.unavarra.es/handle/2454/36159This paper proposes a method for measuring the degradation rate of crystalline silicon PV modules at plant level in two different ways as a form of verification. As actual levels of degradation rate have been observed to be as low as 0.2%/a, the uncertainties make it difficult to measure this value accurately at plant level. However, despite the low value, it is still important to know the actual degradation rate due to its impact on energy yield. In this paper, two ways of measuring the degradation rate at plant level are proposed. These two methods, with different uncertainty sources, are proposed to be used jointly in order to have a better approach to the real value. Finally, an example of measurement in a 1.78 MW PV plant is presented.5 p.application/pdfeng© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work.PVDegradationMeasurementCrystalline siliconinfo:eu-repo/semantics/conferenceObjectinfo:eu-repo/semantics/openAccessAcceso abierto / Sarbide irekia