Álvarez Botero, Germán AndrésTorres-Torres, ReydezelMurphy-Arteaga, Roberto S.2024-02-122024-02-122015Álvarez-Botero, G., Torres-Torres, R., Murphy-Arteaga, R. S. (2015) Consistent modeling and power gain analysis of microwave SiGe HBTs in CE and CB configurations. IEEE Transactions on Microwave Theory and Techniques, 63(12), 3888-3895. https://doi.org/10.1109/TMTT.2015.2496375.0018-948010.1109/TMTT.2015.2496375https://academica-e.unavarra.es/handle/2454/47470This paper presents a methodology to model SiGe HBTs biased in common-emitter and in common-base configurations including the bias-dependent substrate parasitics, which allows determining the more suitable configuration to achieve maximum power gain at different frequency ranges. Model-experiment correlations up to 100 GHz for different bias conditions verify the validity of the proposed circuit representations using the same values for the parameters in both configurations.application/pdfeng© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work.SiGe-HBTEquivalent circuit modelingSubstrate parasitics determinationPower gainCE configurationCB configurationinfo:eu-repo/semantics/article2024-02-12info:eu-repo/semantics/openAccess