Rico-Aniles, Héctor DanielRamírez-Angulo, JaimeLópez Martín, AntonioGonzález Carvajal, Ramón2021-04-262021-04-262020H. D. Rico-Aniles, J. Ramirez-Angulo, A. J. Lopez-Martin and R. G. Carvajal, "360 nW Gate-Driven Ultra-Low Voltage CMOS Linear Transconductor With 1 MHz Bandwidth and Wide Input Range," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 67, no. 11, pp. 2332-2336, Nov. 2020, doi: 10.1109/TCSII.2020.2968246.1549-7747 (Print)10.1109/TCSII.2020.2968246https://academica-e.unavarra.es/handle/2454/39601A low voltage linear transconductor is introduced. The circuit is a pseudo differential architecture that operates with ±0.2V supplies and uses 900nA total biasing current. It employs a floating battery technique to achieve low voltage operation. The transconductor has a 1MHz bandwidth. It exhibits a SNR = 72dB, SFDR = 42dB and THD = 0.83% for a 100mVpp 10kHz sinusoidal input signal. Moreover, stability is not affected by the capacitance of the signal source. The circuit has been validated with a prototype chip fabricated in a 130nm CMOS technology.6 p.application/pdfeng© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work.Analog integrated circuitsLow-powerLow voltageLinear operational transconductance amplifierinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/openAccess