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dc.creatorAlibakhshikenari, Mohammades_ES
dc.creatorVirdee, Bal S.es_ES
dc.creatorSee, Chan H.es_ES
dc.creatorAbd-Alhameed, Raedes_ES
dc.creatorFalcone Lanas, Francisco Javieres_ES
dc.creatorLimiti, Ernestoes_ES
dc.date.accessioned2020-07-02T06:50:36Z
dc.date.issued2020
dc.identifier.citationM. Alibakhshikenari, B. S. Virdee, C. H. See, R. Abd-Alhameed, F. Falcone and E. Limiti, 'A Novel 0.3-0.31 THz GaAs-Based Transceiver with On-Chip Slotted Metamaterial Antenna Based on SIW Technology,' 2019 IEEE Asia-Pacific Microwave Conference (APMC), Singapore, Singapore, 2019, pp. 69-71, doi: 10.1109/APMC46564.2019.9038371.en
dc.identifier.isbn978-1-7281-3517-5
dc.identifier.urihttps://hdl.handle.net/2454/37287
dc.description.abstractThis paper presents a novel on-chip antenna with fully integrated 0.3-0.31 THz transceiver is implemented on 0.5μm GaAs substrate, and comprises a voltage-controlled oscillator (VCO), a buffer amplifier, a modulator stage, a power-amplifier, a frequency-tripler, and an on-chip antenna. The proposed on-chip antenna design is based on metamaterial (MTM) slots and substrate integrated waveguide (SIW) technologies. The SIW antenna operates as a high-pass filter and an on-chip radiator to suppress the unwanted harmonics and radiate the desired signal, respectively. Dimensions of the on-chip antenna are 2×1×0.0006 mm3. The proposed on-chip antenna has an average radiation gain and efficiency of >1.0 dBi and 55%, respectively. The transceiver provides an average output power of-15 dBm over 0.3-0.31 THz, which is suitable for near-field active imaging applications at terahertz region.en
dc.description.sponsorshipThis work is partially supported by innovation programme under grant agreement H2020-MSCA-ITN-2016 SECRET-722424 and the financial support from the UK EPSRC under grant EP/E022936/1.en
dc.format.extent3 p.
dc.format.mimetypeapplication/pdfen
dc.language.isoengen
dc.publisherIEEEen
dc.relation.ispartofProceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC): 10-13 December 2019, Marina Bay Sands, Singapore, 69-71en
dc.rights© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work.en
dc.subjectOn-chip antennaen
dc.subjectMetamaterialen
dc.subjectTerahertz (THz)en
dc.subjectSubstrate integrated waveguide (SIW)en
dc.subjectTransceiveren
dc.subjectGallium Arsenide (GaAs) substrateen
dc.subjectLongitudinal and transverse slot arraysen
dc.titleA novel 0.3-0.31 THz GaAs-based transceiver with on-chip slotted metamaterial antenna based on SIW technologyen
dc.typeinfo:eu-repo/semantics/conferenceObjecten
dc.typeContribución a congreso / Biltzarrerako ekarpenaes
dc.contributor.departmentUniversidad Pública de Navarra. Departamento de Ingeniería Eléctrica, Electrónica y de Comunicaciónes_ES
dc.contributor.departmentNafarroako Unibertsitate Publikoa. Ingeniaritza Elektriko, Elektroniko eta Telekomunikazio Sailaeu
dc.rights.accessRightsinfo:eu-repo/semantics/embargoedAccessen
dc.rights.accessRightsAcceso embargado / Sarbidea bahitua dagoes
dc.embargo.lift2021-03-19
dc.embargo.terms2021-03-19
dc.identifier.doi10.1109/APMC46564.2019.9038371
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/H2020/722424en
dc.relation.publisherversionhttps://doi.org/10.1109/APMC46564.2019.9038371
dc.type.versioninfo:eu-repo/semantics/acceptedVersionen
dc.type.versionVersión aceptada / Onetsi den bertsioaes


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