Show simple item record

dc.creatorRico-Aniles, Héctor Danieles_ES
dc.creatorRamírez-Angulo, Jaimees_ES
dc.creatorLópez Martín, Antonioes_ES
dc.creatorGonzález Carvajal, Ramónes_ES
dc.identifier.citationH. D. Rico-Aniles, J. Ramirez-Angulo, A. J. Lopez-Martin and R. G. Carvajal, "360 nW Gate-Driven Ultra-Low Voltage CMOS Linear Transconductor With 1 MHz Bandwidth and Wide Input Range," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 67, no. 11, pp. 2332-2336, Nov. 2020, doi: 10.1109/TCSII.2020.2968246.en
dc.identifier.issn1549-7747 (Print)
dc.description.abstractA low voltage linear transconductor is introduced. The circuit is a pseudo differential architecture that operates with ±0.2V supplies and uses 900nA total biasing current. It employs a floating battery technique to achieve low voltage operation. The transconductor has a 1MHz bandwidth. It exhibits a SNR = 72dB, SFDR = 42dB and THD = 0.83% for a 100mVpp 10kHz sinusoidal input signal. Moreover, stability is not affected by the capacitance of the signal source. The circuit has been validated with a prototype chip fabricated in a 130nm CMOS technology.en
dc.description.sponsorshipThis work was supported in part by the Agencia Estatal de Investigacion/Fondo Europeo de Desarrollo Regional under Grant TEC2016-80396-C2. The work of Hector D. Rico-Aniles was supported by the Mexican Consejo Nacional de Ciencia y Tecnologia for the through an Academic Scholarship under Grant 408946.en
dc.format.extent6 p.
dc.relation.ispartofIEEE Transactions on Circuits and Systems II: Express Briefs vol. 67, no. 11, November 2020en
dc.rights© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work.en
dc.subjectAnalog integrated circuitsen
dc.subjectLow voltageen
dc.subjectLinear operational transconductance amplifieren
dc.title360 nW gate-driven ultra-low voltage CMOS linear transconductor with 1 MHz bandwidth and wide input rangeen
dc.typeArtículo / Artikuluaes
dc.contributor.departmentIngeniería Eléctrica, Electrónica y de Comunicaciónes_ES
dc.contributor.departmentIngeniaritza Elektrikoa, Elektronikoa eta Telekomunikazio Ingeniaritzaeu
dc.contributor.departmentInstitute of Smart Cities - ISCes_ES
dc.rights.accessRightsAcceso abierto / Sarbide irekiaes
dc.type.versionVersión aceptada / Onetsi den bertsioaes

Files in this item


This item appears in the following Collection(s)

Show simple item record

El Repositorio ha recibido la ayuda de la Fundación Española para la Ciencia y la Tecnología para la realización de actividades en el ámbito del fomento de la investigación científica de excelencia, en la Línea 2. Repositorios institucionales (convocatoria 2020-2021).
Logo MinisterioLogo Fecyt