| dc.creator | Rico-Aniles, Héctor Daniel | es_ES |
| dc.creator | Ramírez-Angulo, Jaime | es_ES |
| dc.creator | López Martín, Antonio | es_ES |
| dc.creator | González Carvajal, Ramón | es_ES |
| dc.date.accessioned | 2021-04-26T15:02:07Z | |
| dc.date.available | 2021-04-26T15:02:07Z | |
| dc.date.issued | 2020 | |
| dc.identifier.citation | H. D. Rico-Aniles, J. Ramirez-Angulo, A. J. Lopez-Martin and R. G. Carvajal, "360 nW Gate-Driven Ultra-Low Voltage CMOS Linear Transconductor With 1 MHz Bandwidth and Wide Input Range," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 67, no. 11, pp. 2332-2336, Nov. 2020, doi: 10.1109/TCSII.2020.2968246. | en |
| dc.identifier.issn | 1549-7747 (Print) | |
| dc.identifier.uri | https://hdl.handle.net/2454/39601 | |
| dc.description.abstract | A low voltage linear transconductor is introduced. The circuit is a pseudo differential architecture that operates with ±0.2V supplies and uses 900nA total biasing current. It employs a floating battery technique to achieve low voltage operation. The transconductor has a 1MHz bandwidth. It exhibits a SNR = 72dB, SFDR = 42dB and THD = 0.83% for a 100mVpp 10kHz sinusoidal input signal. Moreover, stability is not affected by the capacitance of the signal source. The circuit has been validated with a prototype chip fabricated in a 130nm CMOS technology. | en |
| dc.description.sponsorship | This work was supported in part by the
Agencia Estatal de Investigacion/Fondo Europeo de Desarrollo Regional under
Grant TEC2016-80396-C2. The work of Hector D. Rico-Aniles was supported
by the Mexican Consejo Nacional de Ciencia y Tecnologia for the through an
Academic Scholarship under Grant 408946. | en |
| dc.format.extent | 6 p. | |
| dc.format.mimetype | application/pdf | en |
| dc.language.iso | eng | en |
| dc.publisher | IEEE | en |
| dc.relation.ispartof | IEEE Transactions on Circuits and Systems II: Express Briefs vol. 67, no. 11, November 2020 | en |
| dc.rights | © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work. | en |
| dc.subject | Analog integrated circuits | en |
| dc.subject | Low-power | en |
| dc.subject | Low voltage | en |
| dc.subject | Linear operational transconductance amplifier | en |
| dc.title | 360 nW gate-driven ultra-low voltage CMOS linear transconductor with 1 MHz bandwidth and wide input range | en |
| dc.type | Artículo / Artikulua | es |
| dc.type | info:eu-repo/semantics/article | en |
| dc.contributor.department | Ingeniería Eléctrica, Electrónica y de Comunicación | es_ES |
| dc.contributor.department | Ingeniaritza Elektrikoa, Elektronikoa eta Telekomunikazio Ingeniaritza | eu |
| dc.contributor.department | Institute of Smart Cities - ISC | es_ES |
| dc.rights.accessRights | Acceso abierto / Sarbide irekia | es |
| dc.rights.accessRights | info:eu-repo/semantics/openAccess | en |
| dc.identifier.doi | 10.1109/TCSII.2020.2968246 | |
| dc.relation.projectID | info:eu-repo/grantAgreement/ES/1PE/TEC2016-80396 | en |
| dc.relation.publisherversion | https://doi.org/10.1109/TCSII.2020.2968246 | |
| dc.type.version | Versión aceptada / Onetsi den bertsioa | es |
| dc.type.version | info:eu-repo/semantics/acceptedVersion | en |
