Two-stage OTA with all subthreshold MOSFETs and optimum GBW to DC-current ratio
Fecha
2022Versión
Acceso abierto / Sarbide irekia
Tipo
Artículo / Artikulua
Versión
Versión aceptada / Onetsi den bertsioa
Identificador del proyecto
Impacto
|
10.1109/TCSII.2022.3156401
Resumen
An approach for the design of two-stage classAB OTAs with sub-1µA current consumption is proposed and
demonstrated. The approach employs MOS transistors operating
in subthreshold and allows maximum gain-bandwidth product (GBW) to be achieved for a given DC current budget, by
setting optimum distribution of DC currents in the two amplifier
stages. Following this strategy, a class AB OTA was de ...
[++]
An approach for the design of two-stage classAB OTAs with sub-1µA current consumption is proposed and
demonstrated. The approach employs MOS transistors operating
in subthreshold and allows maximum gain-bandwidth product (GBW) to be achieved for a given DC current budget, by
setting optimum distribution of DC currents in the two amplifier
stages. Following this strategy, a class AB OTA was designed in
a standard 0.5-µm CMOS technology supplied from 1.6-V and
experimentally tested. Measured GBW was 307 kHz with 980-nA
DC current consumption while driving an output capacitance of
40 pF with an average slew rate of 96 V/ms [--]
Materias
Circuits and systems,
CMOS,
Low power design,
Miller compensation,
MOSFET,
Power demand,
Resistors,
Standards,
Subthreshold operation,
Transconductance,
Transistors,
Two-stage amplifier
Editor
IEEE
Publicado en
IEEE Transactions on Circuits and Systems—II: Express Briefs, vol. 69, no. 7, July 2022
Departamento
Universidad Pública de Navarra/Nafarroako Unibertsitate Publikoa. Institute of Smart Cities - ISC
Versión del editor
Entidades Financiadoras
This work was supported in part by Agenzia Estatal de Investigación (AEI), Ministerio de Ciencia e Innovación, Spanish Government under Grant PID2019-107258RB-C32