Álvarez Botero, Germán Andrés

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https://academica-e.unavarra.es/handle/2454/50616

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Álvarez Botero

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Germán Andrés

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Ingeniería Eléctrica, Electrónica y de Comunicación

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ISC. Institute of Smart Cities

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0000-0002-1143-6104

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751433

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811966

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Author: Murphy-Arteaga, Roberto S. × Subject: Equivalent circuit modeling ×

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    PublicationOpen Access
    Consistent modeling and power gain analysis of microwave SiGe HBTs in CE and CB configurations
    (IEEE, 2015) Álvarez Botero, Germán Andrés; Torres-Torres, Reydezel; Murphy-Arteaga, Roberto S.; Ingeniería Eléctrica y Electrónica; Ingeniaritza Elektrikoa eta Elektronikoa
    This paper presents a methodology to model SiGe HBTs biased in common-emitter and in common-base configurations including the bias-dependent substrate parasitics, which allows determining the more suitable configuration to achieve maximum power gain at different frequency ranges. Model-experiment correlations up to 100 GHz for different bias conditions verify the validity of the proposed circuit representations using the same values for the parameters in both configurations.