Publication: Consistent modeling and power gain analysis of microwave SiGe HBTs in CE and CB configurations
Consultable a partir de
Date
Authors
Director
Publisher
Project identifier
Abstract
This paper presents a methodology to model SiGe HBTs biased in common-emitter and in common-base configurations including the bias-dependent substrate parasitics, which allows determining the more suitable configuration to achieve maximum power gain at different frequency ranges. Model-experiment correlations up to 100 GHz for different bias conditions verify the validity of the proposed circuit representations using the same values for the parameters in both configurations.
Description
Keywords
Department
Faculty/School
Degree
Doctorate program
item.page.cita
item.page.rights
© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work.
Los documentos de Academica-e están protegidos por derechos de autor con todos los derechos reservados, a no ser que se indique lo contrario.