López Martín, Antonio
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López Martín
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Antonio
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Ingeniería Eléctrica, Electrónica y de Comunicación
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ISC. Institute of Smart Cities
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Publication Open Access Energy-efficient amplifiers based on quasi-floating gate techniques(MDPI, 2021) López Martín, Antonio; Garde Luque, María Pilar; Algueta-Miguel, Jose M.; Beloso Legarra, Javier; González Carvajal, Ramón; Ramírez-Angulo, Jaime; Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren; Institute of Smart Cities - ISC; Ingeniería Eléctrica, Electrónica y de ComunicaciónEnergy efficiency is a key requirement in the design of amplifiers for modern wireless applications. The use of quasi-floating gate (QFG) transistors is a very convenient approach to achieve such energy efficiency. We illustrate different QFG circuit design techniques aimed to implement low-voltage energy-efficient class AB amplifiers. A new super class AB QFG amplifier is presented as a design example including some of the techniques described. The amplifier has been fabricated in a 130 nm CMOS test chip prototype. Measurement results confirm that low-voltage ultra low power amplifiers can be designed preserving at the same time excellent small-signal and large-signal performance.Publication Open Access Pseudo-three-stage Miller op-amp with enhanced small-signal and large-signal performance(IEEE, 2019) Paul, Anindita; Ramírez-Angulo, Jaime; López Martín, Antonio; González Carvajal, Ramón; Rocha-Pérez, José Miguel; Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren; Institute of Smart Cities - ISC; Ingeniería Eléctrica, Electrónica y de ComunicaciónA simple technique to implement highly power efficient class AB-AB Miller op-amps is presented in this paper. It uses a composite input stage with resistive local common mode feedback that provides class AB operation to the input stage and essentially enhances the op-amp's effective transconductance gain, the dc open-loop gain, the gain-bandwidth product, and slew rate with just moderate increase in power dissipation. The experimental results of op-amps in strong inversion and subthreshold fabricated in a 130-nm standard CMOS technology validate the proposed approach. The op-amp has 9 V·pF/μs·μW large-signal figure of merit (FOM) and 17 MHz · pF/μW small-signal FOM with 1.2-V supply voltage. In subthreshold, the op-amp has 10 V · pF/μs · μW large-signal FOM and 92 MHz · pF/μW small-signal FOM with 0.5-V supply voltage.Publication Open Access Class AB amplifier with enhanced slew rate and GBW(John Wiley & Sons, 2019) Garde Luque, María Pilar; López Martín, Antonio; Algueta-Miguel, Jose M.; Ramírez-Angulo, Jaime; González Carvajal, Ramón; Ingeniería Eléctrica y Electrónica; Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio IngeniaritzarenThe design of a micropower class AB operational transconductance amplifier with large dynamic current to quiescent current ratio is addressed. It is based on a compact and power-efficient adaptive biasing circuit and a class AB current follower using the Quasi-Floating Gate (QFG) technique. The amplifier has been designed and fabricated in a 0.5 um CMOS process. Simulation and measurement results show a slew rate (SR) improvement factor versus the class A version larger than 4 for the same supply voltage and bias currents, as well as enhanced small-signal performance.Publication Open Access 360 nW gate-driven ultra-low voltage CMOS linear transconductor with 1 MHz bandwidth and wide input range(IEEE, 2020) Rico-Aniles, Héctor Daniel; Ramírez-Angulo, Jaime; López Martín, Antonio; González Carvajal, Ramón; Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren; Institute of Smart Cities - ISC; Ingeniería Eléctrica, Electrónica y de ComunicaciónA low voltage linear transconductor is introduced. The circuit is a pseudo differential architecture that operates with ±0.2V supplies and uses 900nA total biasing current. It employs a floating battery technique to achieve low voltage operation. The transconductor has a 1MHz bandwidth. It exhibits a SNR = 72dB, SFDR = 42dB and THD = 0.83% for a 100mVpp 10kHz sinusoidal input signal. Moreover, stability is not affected by the capacitance of the signal source. The circuit has been validated with a prototype chip fabricated in a 130nm CMOS technology.