Two-stage OTA with all subthreshold MOSFETs and optimum GBW to DC-current ratio

dc.contributor.authorBeloso Legarra, Javier
dc.contributor.authorGrasso, A.
dc.contributor.authorLópez Martín, Antonio
dc.contributor.authorPalumbo, Gaetano
dc.contributor.authorPennisi, Salvatore
dc.contributor.departmentInstitute of Smart Cities - ISCen
dc.date.accessioned2022-09-08T08:43:02Z
dc.date.available2023-03-03T00:00:14Z
dc.date.issued2022
dc.date.updated2022-09-08T08:37:10Z
dc.description.abstractAn approach for the design of two-stage classAB OTAs with sub-1µA current consumption is proposed and demonstrated. The approach employs MOS transistors operating in subthreshold and allows maximum gain-bandwidth product (GBW) to be achieved for a given DC current budget, by setting optimum distribution of DC currents in the two amplifier stages. Following this strategy, a class AB OTA was designed in a standard 0.5-µm CMOS technology supplied from 1.6-V and experimentally tested. Measured GBW was 307 kHz with 980-nA DC current consumption while driving an output capacitance of 40 pF with an average slew rate of 96 V/msen
dc.description.sponsorshipThis work was supported in part by Agenzia Estatal de Investigación (AEI), Ministerio de Ciencia e Innovación, Spanish Government under Grant PID2019-107258RB-C32en
dc.embargo.lift2023-03-03
dc.embargo.terms2023-03-03
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBeloso-Legarra, J.; Grasso A.; Lopez-Martin, A.; Palumbo, G.; Pennisi, S.. (2022). Two-stage OTA with all subthreshold MOSFETs and optimum GBW to DC-current ratio. IEEE Transactions on circuits and systems II: Express briefs.en
dc.identifier.doi10.1109/TCSII.2022.3156401
dc.identifier.issn1549-7747
dc.identifier.urihttps://academica-e.unavarra.es/handle/2454/43976
dc.language.isoengen
dc.publisherIEEEen
dc.relation.ispartofIEEE Transactions on Circuits and Systems—II: Express Briefs, vol. 69, no. 7, July 2022en
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2019-107258RB-C32/ES/
dc.relation.publisherversionhttps://doi.org/10.1109/TCSII.2022.3156401
dc.rights© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work.en
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.subjectCircuits and systemsen
dc.subjectCMOSen
dc.subjectLow power designen
dc.subjectMiller compensationen
dc.subjectMOSFETen
dc.subjectPower demanden
dc.subjectResistorsen
dc.subjectStandardsen
dc.subjectSubthreshold operationen
dc.subjectTransconductanceen
dc.subjectTransistorsen
dc.subjectTwo-stage amplifieren
dc.titleTwo-stage OTA with all subthreshold MOSFETs and optimum GBW to DC-current ratioen
dc.typeinfo:eu-repo/semantics/article
dc.type.versioninfo:eu-repo/semantics/acceptedVersion
dspace.entity.typePublication
relation.isAuthorOfPublication68898efd-37a6-48c7-8e2c-0fd2ab00a2a5
relation.isAuthorOfPublicationd3dc0470-6429-43e7-80f2-15fae67f4204
relation.isAuthorOfPublication.latestForDiscovery68898efd-37a6-48c7-8e2c-0fd2ab00a2a5

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