Silicon carbide as a material-based high-impedance surface for enhanced absorption within ultra-thin metallic films

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dc.contributor.authorPérez Escudero, José Manuel
dc.contributor.authorBuldain, Iban
dc.contributor.authorBeruete Díaz, Miguel
dc.contributor.authorGoicoechea Fernández, Javier
dc.contributor.authorLiberal Olleta, Íñigo
dc.contributor.departmentInstitute of Smart Cities - ISCen
dc.contributor.departmentIngeniería Eléctrica, Electrónica y de Comunicaciónes_ES
dc.contributor.departmentIngeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzareneu
dc.date.accessioned2021-06-14T11:17:33Z
dc.date.available2021-06-14T11:17:33Z
dc.date.issued2020
dc.description.abstractThe absorption of infrared radiation within ultra-thin metallic films is technologically relevant for different thermal engineering applications and optoelectronic devices, as well as for fundamental research on sub-nanometer and atomically-thin materials. However, the maximal attainable absorption within an ultra-thin metallic film is intrinsically limited by both its geometry and material properties. Here, we demonstrate that material-based high-impedance surfaces enhance the absorptivity of the films, potentially leading to perfect absorption for optimal resistive layers, and a fourfold enhancement for films at deep nanometer scales. Moreover, material-based high-impedance surfaces do not suffer from spatial dispersion and the geometrical restrictions of their metamaterial counterparts. We provide a proof-of-concept experimental demonstration by using titanium nanofilms on top of a silicon carbide substrate.en
dc.description.sponsorshipHorizon 2020 Framework Programme (ATTRACT ENZSICSENS); Ministerio de Ciencia, Innovación y Universidades (RTI2018-093714-301 J-I00, RYC2018-024123-I).en
dc.format.extent13 p.
dc.format.mimetypeapplication/pdfen
dc.identifier.doi10.1364/OE.402397
dc.identifier.issn1094-4087
dc.identifier.urihttps://academica-e.unavarra.es/handle/2454/39904
dc.language.isoengen
dc.publisherOptical Society of Americaen
dc.relation.ispartofOptics Express, 28 (21), 31624-31636en
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/RTI2018-093714-J-I00/ES/
dc.relation.projectIDinfo:eu-repo/grantAgreement/MICIU/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/RYC2018-024123-I/
dc.relation.publisherversionhttps://doi.org/10.1364/OE.402397
dc.rights© 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.en
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.subjectUltra-thin metallic filmsen
dc.subjectAbsorptivityen
dc.subjectSilicon carbide substratesen
dc.subjectInfrarred radiationen
dc.subjectMaterial-based high-impedance surfacesen
dc.titleSilicon carbide as a material-based high-impedance surface for enhanced absorption within ultra-thin metallic filmsen
dc.typeinfo:eu-repo/semantics/article
dc.type.versioninfo:eu-repo/semantics/publishedVersion
dspace.entity.typePublication
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relation.isAuthorOfPublication6853cbd8-0a88-42ab-b165-c51b99cb6353
relation.isAuthorOfPublicationd658878f-737e-410c-a380-9f69ad704c05
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relation.isAuthorOfPublication.latestForDiscovery59d1e613-d28a-4a04-a2d3-23bd353c76d1

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