Modeling and parameter extraction of test fixtures for MOSFET on-wafer measurements up to 60 GHz

dc.contributor.authorÁlvarez Botero, Germán Andrés
dc.contributor.authorTorres-Torres, Reydezel
dc.contributor.authorMurphy-Arteaga, Roberto S.
dc.contributor.departmentIngeniería Eléctrica y Electrónicaes_ES
dc.contributor.departmentIngeniaritza Elektrikoa eta Elektronikoaeu
dc.date.accessioned2024-02-12T13:41:37Z
dc.date.available2024-02-12T13:41:37Z
dc.date.issued2013
dc.date.updated2024-02-12T13:41:06Z
dc.description.abstractWe present a circuit model and parameter determination methodology for test fixtures used for on-wafer S-parameter measurements on CMOS devices. The model incorporates the frequency dependence of the series resistances and inductances due to the skin effect occurring in the metal pads. Physically based representations for this effect allow for excellent theory-experiment correlations for different dummy structures, as well as when de-embedding transistor measurements up to 60 GHz.en
dc.description.sponsorshipThey acknowledge the partial support of this project by CONACyT through Grant 83774-Y, and the scholarship to undertake doctoral studies number 213292.en
dc.format.mimetypeapplication/pdfen
dc.identifier.citationÁlvarez-Botero, G., Torres-Torres, R., Murphy-Arteaga, R. S. (2013) Modeling and parameter extraction of test fixtures for MOSFET on-wafer measurements up to 60 GHz. International Journal of RF and Microwave Computer-Aided Engineering, 23(6), 655-661. https://doi.org/10.1002/mmce.20701.en
dc.identifier.doi10.1002/mmce.20701
dc.identifier.issn1096-4290
dc.identifier.urihttps://academica-e.unavarra.es/handle/2454/47472
dc.language.isoengen
dc.publisherWileyen
dc.relation.ispartofInternational Journal of RF and Microwave Computer-Aided Engineering 23: 655-661en
dc.relation.publisherversionhttps://doi.org/10.1002/mmce.20701
dc.rights© 2012 Wiley Periodicals, Inc.en
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.subjectRF-measurementsen
dc.subjectS-parametersen
dc.subjectTest fixturesen
dc.subjectEquivalent circuit modelingen
dc.subjectCMOSdevicesen
dc.titleModeling and parameter extraction of test fixtures for MOSFET on-wafer measurements up to 60 GHzen
dc.typeinfo:eu-repo/semantics/article
dc.type.versioninfo:eu-repo/semantics/acceptedVersion
dspace.entity.typePublication
relation.isAuthorOfPublication58d4f996-e27b-45a9-b93a-c397d7fa5e0a
relation.isAuthorOfPublication.latestForDiscovery58d4f996-e27b-45a9-b93a-c397d7fa5e0a

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