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Vertically coupled InP/InGaAsP microring lasers using a single epitaxial growth and singleside lithography

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dc.contributor.authorGarcía López, Óscar
dc.contributor.authorThourhout, Dries Van
dc.contributor.authorVerstuyft, Steven
dc.contributor.authorLópez-Amo Sáinz, Manuel
dc.contributor.authorBaets, Roel
dc.contributor.authorGalarza Galarza, Marko
dc.contributor.departmentIngeniería Eléctrica, Electrónica y de Comunicaciónes_ES
dc.contributor.departmentIngeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzareneu
dc.date.accessioned2020-07-09T09:51:38Z
dc.date.available2021-03-30T23:00:16Z
dc.date.issued2020
dc.description.abstractThe experimental demonstration of vertical microring lasers requiring only one single epitaxial growth and two single-side lithographic steps is presented, in what is the simplest fabrication scheme for such devices published to date. The fabricated lasers show series resistance of around 20 Ω at forward bias, threshold currents at room temperature between 35 and 58 mA, and single-mode emission with a side-lobe suppression ratio higher than 30 dB. The measured optic output power level is of tens of microwatts. The approach allows the improvement of the optical features maintaining the simplicity of the manufacturing procedure.en
dc.description.sponsorshipThis work was supported by the Spanish Agencia Estatal de Investigación within project TEC2016-76021-C2-1-R, and FEDER funds of EU.en
dc.embargo.lift2021-03-30
dc.embargo.terms2021-03-30
dc.format.extent4 p.
dc.format.mimetypeapplication/pdfen
dc.identifier.citationO. García, D. Van Thourhout, S. Verstuyft, M. Lopez-Amo, R. Baets and M. Galarza, 'Vertically coupled InP/InGaAsP microring lasers using a single epitaxial growth and single-side lithography,' in Journal of Lightwave Technology, doi: 10.1109/JLT.2020.2983463.en
dc.identifier.doi10.1109/JLT.2020.2983463
dc.identifier.issn1558-2213
dc.identifier.urihttps://academica-e.unavarra.es/handle/2454/37324
dc.language.isoengen
dc.publisherIEEEen
dc.relation.ispartofJournal of Lightwave Technology, 2020en
dc.relation.projectIDinfo:eu-repo/grantAgreement/ES/1PE/TEC2016-76021en
dc.relation.publisherversionhttps://doi.org/10.1109/JLT.2020.2983463
dc.rights© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work.en
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.subjectIntegrated opticsen
dc.subjectSemiconductor waveguidesen
dc.subjectSemiconductor lasersen
dc.subjectRing lasersen
dc.titleVertically coupled InP/InGaAsP microring lasers using a single epitaxial growth and singleside lithographyen
dc.typeinfo:eu-repo/semantics/article
dc.type.versioninfo:eu-repo/semantics/acceptedVersionen
dc.type.versionVersión aceptada / Onetsi den bertsioaes
dspace.entity.typePublication
relation.isAuthorOfPublication265f9852-fc76-4fec-92fd-dc27f4daddc0
relation.isAuthorOfPublicationa3781686-7980-4c0b-b3b7-b943927a668d
relation.isAuthorOfPublication.latestForDiscovery265f9852-fc76-4fec-92fd-dc27f4daddc0

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