Listar Artículos de revista - Aldizkari artikuluak por autor "Murphy-Arteaga, Roberto S."
Mostrando ítems 1-5 de 5
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Characterization of RF-MOSFETs in common-source configuration at different source-to-bulk voltages from S-parameters
Zárate-Rincón, Fabián; Álvarez Botero, Germán Andrés; Torres-Torres, Reydezel; Murphy-Arteaga, Roberto S.; Decoutere, Stefaan (IEEE, 2013) Artículo / ArtikuluaUsing a new test fixture that allows us to bias the bulk terminal through an additional compensated DC probe, a two-port S-measurement-based methodology to characterize RF-MOSFETs in common-source configuration is herein ... -
Consistent modeling and power gain analysis of microwave SiGe HBTs in CE and CB configurations
Álvarez Botero, Germán Andrés; Torres-Torres, Reydezel; Murphy-Arteaga, Roberto S. (IEEE, 2015) Artículo / ArtikuluaThis paper presents a methodology to model SiGe HBTs biased in common-emitter and in common-base configurations including the bias-dependent substrate parasitics, which allows determining the more suitable configuration ... -
Modeling and parameter extraction of test fixtures for MOSFET on-wafer measurements up to 60 GHz
Álvarez Botero, Germán Andrés; Torres-Torres, Reydezel; Murphy-Arteaga, Roberto S. (Wiley, 2013) Artículo / ArtikuluaWe present a circuit model and parameter determination methodology for test fixtures used for on-wafer S-parameter measurements on CMOS devices. The model incorporates the frequency dependence of the series resistances and ... -
Modeling ground-shielded integrated inductors incorporating frequency-dependent effects and considering multiple resonances
Valdés-Rayón, José; Torres-Torres, Reydezel; Murphy-Arteaga, Roberto S.; Álvarez Botero, Germán Andrés (IEEE, 2019) Artículo / ArtikuluaA model for integrated spiral inductors which incorporates the physically expected frequency-dependent effects modifying the device's impedance is proposed. Moreover, it is demonstrated that the effect of resonances occurring ... -
Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs
Álvarez Botero, Germán Andrés; Torres-Torres, Reydezel; Murphy-Arteaga, Roberto S. (Elsevier, 2011) Artículo / ArtikuluaIn this paper, we present an extraction and characterization methodology which allows for the determination, from S-parameter measurements, of the threshold voltage, the gain factor, and the mobility degradation factor, ...