Characterization of RF-MOSFETs in common-source configuration at different source-to-bulk voltages from S-parameters
Fecha
2013Autor
Versión
Acceso abierto / Sarbide irekia
Tipo
Artículo / Artikulua
Versión
Versión aceptada / Onetsi den bertsioa
Impacto
|
10.1109/TED.2013.2264724
Resumen
Using a new test fixture that allows us to bias the bulk terminal through an additional compensated DC probe, a two-port S-measurement-based methodology to characterize RF-MOSFETs in common-source configuration is herein presented. In addition to obtaining S-parameters at different bulk-to-source voltages using a single two-port configured test-fixture, the proposal allows the analysis of the ele ...
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Using a new test fixture that allows us to bias the bulk terminal through an additional compensated DC probe, a two-port S-measurement-based methodology to characterize RF-MOSFETs in common-source configuration is herein presented. In addition to obtaining S-parameters at different bulk-to-source voltages using a single two-port configured test-fixture, the proposal allows the analysis of the electrical parameters of a MOSFET that are influenced by the substrate effect when the frequency rises. Physically expected results are obtained for device's model parameters, allowing to accurately reproduce S-parameters up to 20 GHz. Furthermore, extracted parameters, such as threshold voltage, are in agreement with those obtained using well-established DC methods. This method allows one to characterize a four-terminal MOSFET from two-port small-signal measurements. [--]
Materias
DC methods,
Physical parameters of MOSFET,
RF-MOSFET,
Two-port S-parameter measurements
Editor
IEEE
Publicado en
IEEE Transactions on Electron Devices vol. 60, no. 8, pp. 2450-2456, Aug. 2013
Departamento
Universidad Pública de Navarra. Departamento de Ingeniería Eléctrica y Electrónica /
Nafarroako Unibertsitate Publikoa. Ingeniaritza Elektrikoa eta Elektronikoa Saila