Consistent modeling and power gain analysis of microwave SiGe HBTs in CE and CB configurations
Fecha
2015Versión
Acceso abierto / Sarbide irekia
Tipo
Artículo / Artikulua
Versión
Versión aceptada / Onetsi den bertsioa
Impacto
|
10.1109/TMTT.2015.2496375
Resumen
This paper presents a methodology to model SiGe HBTs biased in common-emitter and in common-base configurations including the bias-dependent substrate parasitics, which allows determining the more suitable configuration to achieve maximum power gain at different frequency ranges. Model-experiment correlations up to 100 GHz for different bias conditions verify the validity of the proposed circuit ...
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This paper presents a methodology to model SiGe HBTs biased in common-emitter and in common-base configurations including the bias-dependent substrate parasitics, which allows determining the more suitable configuration to achieve maximum power gain at different frequency ranges. Model-experiment correlations up to 100 GHz for different bias conditions verify the validity of the proposed circuit representations using the same values for the parameters in both configurations. [--]
Materias
SiGe-HBT,
Equivalent circuit modeling,
Substrate parasitics determination,
Power gain,
CE configuration,
CB configuration
Editor
IEEE
Publicado en
IEEE Transactions on Microwave Theory and Techniques vol. 63, no. 12, pp. 3888-3895, Dec. 2015
Departamento
Universidad Pública de Navarra. Departamento de Ingeniería Eléctrica y Electrónica /
Nafarroako Unibertsitate Publikoa. Ingeniaritza Elektrikoa eta Elektronikoa Saila