Consistent modeling and power gain analysis of microwave SiGe HBTs in CE and CB configurations

Álvarez Botero, Germán Andrés; Torres-Torres, Reydezel; Murphy-Arteaga, Roberto S.

doi:10.1109/TMTT.2015.2496375

dc.creator	Álvarez Botero, Germán Andrés	es_ES
dc.creator	Torres-Torres, Reydezel	es_ES
dc.creator	Murphy-Arteaga, Roberto S.	es_ES
dc.date.accessioned	2024-02-12T13:30:49Z
dc.date.available	2024-02-12T13:30:49Z
dc.date.issued	2015
dc.identifier.citation	Álvarez-Botero, G., Torres-Torres, R., Murphy-Arteaga, R. S. (2015) Consistent modeling and power gain analysis of microwave SiGe HBTs in CE and CB configurations. IEEE Transactions on Microwave Theory and Techniques, 63(12), 3888-3895. https://doi.org/10.1109/TMTT.2015.2496375.	en
dc.identifier.issn	0018-9480
dc.identifier.uri	https://hdl.handle.net/2454/47470
dc.description.abstract	This paper presents a methodology to model SiGe HBTs biased in common-emitter and in common-base configurations including the bias-dependent substrate parasitics, which allows determining the more suitable configuration to achieve maximum power gain at different frequency ranges. Model-experiment correlations up to 100 GHz for different bias conditions verify the validity of the proposed circuit representations using the same values for the parameters in both configurations.	en
dc.format.mimetype	application/pdf	en
dc.language.iso	eng	en
dc.publisher	IEEE	en
dc.relation.ispartof	IEEE Transactions on Microwave Theory and Techniques vol. 63, no. 12, pp. 3888-3895, Dec. 2015	en
dc.rights	© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work.	en
dc.subject	SiGe-HBT	en
dc.subject	Equivalent circuit modeling	en
dc.subject	Substrate parasitics determination	en
dc.subject	Power gain	en
dc.subject	CE configuration	en
dc.subject	CB configuration	en
dc.title	Consistent modeling and power gain analysis of microwave SiGe HBTs in CE and CB configurations	en
dc.type	Artículo / Artikulua	es
dc.type	info:eu-repo/semantics/article	en
dc.date.updated	2024-02-12T13:29:41Z
dc.contributor.department	Ingeniería Eléctrica y Electrónica	es_ES
dc.contributor.department	Ingeniaritza Elektrikoa eta Elektronikoa	eu
dc.rights.accessRights	Acceso abierto / Sarbide irekia	es
dc.rights.accessRights	info:eu-repo/semantics/openAccess	en
dc.identifier.doi	10.1109/TMTT.2015.2496375
dc.relation.publisherversion	https://doi.org/10.1109/TMTT.2015.2496375
dc.type.version	info:eu-repo/semantics/acceptedVersion	en
dc.type.version	Versión aceptada / Onetsi den bertsioa	es

Ficheros en el ítem

Nombre:: 2015 TMTT.pdf
Tamaño:: 1.442Mb
Formato:: PDF

Ver/

Este ítem aparece en la(s) siguiente(s) colección(ones)

Mostrar el registro sencillo del ítem