High-linearity tunable low-Gm transconductor based on bootstrapping

Cinco-Izquierdo, Óscar J.; Cruz Blas, Carlos Aristóteles de la; Sanz-Pascual, M. Teresa

Publication:
High-linearity tunable low-Gm transconductor based on bootstrapping

dc.contributor.author	Cinco-Izquierdo, Óscar J.
dc.contributor.author	Cruz Blas, Carlos Aristóteles de la
dc.contributor.author	Sanz-Pascual, M. Teresa
dc.contributor.department	Ingeniería Eléctrica, Electrónica y de Comunicación	es_ES
dc.contributor.department	Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren	eu
dc.date.accessioned	2022-01-26T08:35:10Z
dc.date.available	2022-06-21T23:00:18Z
dc.date.issued	2021
dc.description.abstract	In this brief, a novel pseudo-differential low-transconductance amplifier is proposed based on the bootstrapping technique. The transconductor is implemented using two voltage follower topologies as amplifiers with their outputs connected to both terminals of a resistor, thus bootstrapping the voltages at these terminals to increase the equivalent resistance value, and achieve a very low transconductance without the need for large passive components. In this way, a highly-linear compact structure is designed whose transconductance can be tuned by external current sources. The circuit was fabricated in a standard 0.18μm CMOS process. The experimental results show a tunable transconductance in the range of tens of nA/V, with a total harmonic distortion lower than -40dB at 350mVpp@1kHz. The power consumption of the amplifier is 4μW under a 1.8V supply voltage.	en
dc.description.sponsorship	This work was supported by CONACYT through the Doctoral Grant 467255 and the Research Project CONACYT CB-2015-257985	en
dc.embargo.lift	2022-06-21
dc.embargo.terms	2022-06-21
dc.format.extent	5 p.
dc.format.mimetype	application/pdf	en
dc.identifier.citation	O. J. Cinco-Izquierdo, C. A. de la Cruz-Blas and M. T. Sanz-Pascual, "High-Linearity Tunable Low-Gm Transconductor based on Bootstrapping," in IEEE Transactions on Circuits and Systems II: Express Briefs, doi: 10.1109/TCSII.2021.3090983.	en
dc.identifier.doi	10.1109/TCSII.2021.3090983
dc.identifier.issn	1549-7747
dc.identifier.uri	https://academica-e.unavarra.es/handle/2454/41954
dc.language.iso	eng	en
dc.publisher	IEEE
dc.relation.ispartof	IEEE Transactions on Circuits and Systems Ii: Express Briefs, may 2021	en
dc.relation.publisherversion	https://doi.org/10.1109/TCSII.2021.3090983
dc.rights	© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work	en
dc.rights.accessRights	info:eu-repo/semantics/openAccess
dc.subject	Analog CMOS	en
dc.subject	Bootstrapping	en
dc.subject	Current mirrors	en
dc.subject	Linearity	en
dc.subject	Low Gm OTA.	en
dc.subject	Power demand	en
dc.subject	Resistance	en
dc.subject	Resistors	en
dc.subject	Transconductance	en
dc.subject	Transistors	en
dc.title	High-linearity tunable low-Gm transconductor based on bootstrapping	en
dc.type	info:eu-repo/semantics/article
dc.type.version	info:eu-repo/semantics/acceptedVersion	en
dc.type.version	Versión aceptada / Onetsi den bertsioa	es
dspace.entity.type	Publication
relation.isAuthorOfPublication	0f463668-5e83-4f16-9712-1dbcbeb46735
relation.isAuthorOfPublication.latestForDiscovery	0f463668-5e83-4f16-9712-1dbcbeb46735