Consistent modeling and power gain analysis of microwave SiGe HBTs in CE and CB configurations

dc.contributor.authorÁlvarez Botero, Germán Andrés
dc.contributor.authorTorres-Torres, Reydezel
dc.contributor.authorMurphy-Arteaga, Roberto S.
dc.contributor.departmentIngeniería Eléctrica y Electrónicaes_ES
dc.contributor.departmentIngeniaritza Elektrikoa eta Elektronikoaeu
dc.date.accessioned2024-02-12T13:30:49Z
dc.date.available2024-02-12T13:30:49Z
dc.date.issued2015
dc.date.updated2024-02-12T13:29:41Z
dc.description.abstractThis paper presents a methodology to model SiGe HBTs biased in common-emitter and in common-base configurations including the bias-dependent substrate parasitics, which allows determining the more suitable configuration to achieve maximum power gain at different frequency ranges. Model-experiment correlations up to 100 GHz for different bias conditions verify the validity of the proposed circuit representations using the same values for the parameters in both configurations.en
dc.format.mimetypeapplication/pdfen
dc.identifier.citationÁlvarez-Botero, G., Torres-Torres, R., Murphy-Arteaga, R. S. (2015) Consistent modeling and power gain analysis of microwave SiGe HBTs in CE and CB configurations. IEEE Transactions on Microwave Theory and Techniques, 63(12), 3888-3895. https://doi.org/10.1109/TMTT.2015.2496375.en
dc.identifier.doi10.1109/TMTT.2015.2496375
dc.identifier.issn0018-9480
dc.identifier.urihttps://academica-e.unavarra.es/handle/2454/47470
dc.language.isoengen
dc.publisherIEEEen
dc.relation.ispartofIEEE Transactions on Microwave Theory and Techniques vol. 63, no. 12, pp. 3888-3895, Dec. 2015en
dc.relation.publisherversionhttps://doi.org/10.1109/TMTT.2015.2496375
dc.rights© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work.en
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.subjectSiGe-HBTen
dc.subjectEquivalent circuit modelingen
dc.subjectSubstrate parasitics determinationen
dc.subjectPower gainen
dc.subjectCE configurationen
dc.subjectCB configurationen
dc.titleConsistent modeling and power gain analysis of microwave SiGe HBTs in CE and CB configurationsen
dc.typeinfo:eu-repo/semantics/article
dc.type.versioninfo:eu-repo/semantics/acceptedVersion
dspace.entity.typePublication
relation.isAuthorOfPublication58d4f996-e27b-45a9-b93a-c397d7fa5e0a
relation.isAuthorOfPublication.latestForDiscovery58d4f996-e27b-45a9-b93a-c397d7fa5e0a

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