Affixing N-terminal a-helix to the wall of the voltage-dependent anion channel does not prevent its voltage gating

dc.contributor.authorTeijido Hermida, Óscar
dc.contributor.authorUjwal, Rachna
dc.contributor.authorHillerdal, Carl-Olof
dc.contributor.authorKullman, Lisen
dc.contributor.authorRostovtseva, Tatiana K.
dc.contributor.authorAbramson, Jeff
dc.contributor.departmentCiencias de la Saludes_ES
dc.contributor.departmentOsasun Zientziakeu
dc.date.accessioned2025-01-29T09:09:25Z
dc.date.available2025-01-29T09:09:25Z
dc.date.issued2012-03-30
dc.date.updated2025-01-29T08:54:38Z
dc.description.abstractThe voltage-dependent anion channel (VDAC) governs the free exchange of ions and metabolites between the mitochondria and the rest of the cell. The three-dimensional structure of VDAC1 reveals a channel formed by 19 β-strands and an N-terminal α-helix located near the midpoint of the pore. The position of this α-helix causes a narrowing of the cavity, but ample space for metabolite passage remains. The participation of the N-terminus of VDAC1 in the voltage-gating process has been well established, but the molecular mechanism continues to be debated; however, the majority of models entail large conformational changes of this N-terminal segment. Here we report that the pore-lining N-terminal α-helix does not undergo independent structural rearrangements during channel gating. We engineered a double Cys mutant in murine VDAC1 that cross-links the α-helix to the wall of the β-barrel pore and reconstituted the modified protein into planar lipid bilayers. The modified murine VDAC1 exhibited typical voltage gating. These results suggest that the N-terminal α-helix is located inside the pore of VDAC in the open state and remains associated with β-strand 11 of the pore wall during voltage gatingen
dc.description.sponsorshipThis work was supported, in whole or in part, by the Intramural Research Program of the Eunice Kennedy Shriver NICHD, National Institutes of Health (to O. T. and T. K. R.) and National Institutes of Health Grant RO1 GM078844 (to J. A.).
dc.format.mimetypeapplication/pdfen
dc.format.mimetypeapplication/zipen
dc.identifier.citationTeijido, O., Ujwal, R., Hillerdal, C. O., Kullman, L., Rostovtseva, T. K., Abramson, J. (2012). Affixing N-terminal a-helix to the wall of the voltage-dependent anion channel does not prevent its voltage gating. Journal of the Biological Chemistry, 287(14), 11437-11445. https://doi.org/10.1074/jbc.M111.314229.
dc.identifier.doi10.1074/jbc.M111.314229
dc.identifier.issn0021-9258
dc.identifier.urihttps://academica-e.unavarra.es/handle/2454/53142
dc.language.isoeng
dc.publisherElsevier
dc.relation.ispartofJournal of the Biological Chemistry (2012), vol. 287, núm. 14
dc.relation.publisherversionhttps://doi.org/10.1074/jbc.M111.314229
dc.rightsThis is an open access article under the CC BY license.
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectADPen
dc.subjectATPen
dc.subjectBioenergeticsen
dc.subjectBiophysicsen
dc.subjectStructural biologyen
dc.subjectStructural dynamicsen
dc.subjectVoltage dependencyen
dc.subjectVoltage-dependent anion channelen
dc.titleAffixing N-terminal a-helix to the wall of the voltage-dependent anion channel does not prevent its voltage gatingen
dc.typeinfo:eu-repo/semantics/article
dc.type.versioninfo:eu-repo/semantics/publishedVersion
dspace.entity.typePublication
relation.isAuthorOfPublication2af87636-fad2-48e3-b5f6-f4a704d93613
relation.isAuthorOfPublication.latestForDiscovery2af87636-fad2-48e3-b5f6-f4a704d93613

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