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dc.creatorCinco Izquierdo, O. J.es_ES
dc.creatorCruz Blas, Carlos Aristóteles de laes_ES
dc.creatorSanz Pascual, M. T.es_ES
dc.date.accessioned2022-01-26T08:35:10Z
dc.date.available2022-06-21T23:00:18Z
dc.date.issued2021
dc.identifier.citationO. J. Cinco-Izquierdo, C. A. de la Cruz-Blas and M. T. Sanz-Pascual, "High-Linearity Tunable Low-Gm Transconductor based on Bootstrapping," in IEEE Transactions on Circuits and Systems II: Express Briefs, doi: 10.1109/TCSII.2021.3090983.en
dc.identifier.issn1549-7747
dc.identifier.urihttps://hdl.handle.net/2454/41954
dc.description.abstractIn this brief, a novel pseudo-differential low-transconductance amplifier is proposed based on the bootstrapping technique. The transconductor is implemented using two voltage follower topologies as amplifiers with their outputs connected to both terminals of a resistor, thus bootstrapping the voltages at these terminals to increase the equivalent resistance value, and achieve a very low transconductance without the need for large passive components. In this way, a highly-linear compact structure is designed whose transconductance can be tuned by external current sources. The circuit was fabricated in a standard 0.18μm CMOS process. The experimental results show a tunable transconductance in the range of tens of nA/V, with a total harmonic distortion lower than -40dB at 350mVpp@1kHz. The power consumption of the amplifier is 4μW under a 1.8V supply voltage.en
dc.description.sponsorshipThis work was supported by CONACYT through the Doctoral Grant 467255 and the Research Project CONACYT CB-2015-257985en
dc.format.extent5 p.
dc.format.mimetypeapplication/pdfen
dc.language.isoengen
dc.publisherIEEE
dc.relation.ispartofIEEE Transactions on Circuits and Systems Ii: Express Briefs, may 2021en
dc.rights© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other worken
dc.subjectAnalog CMOSen
dc.subjectBootstrappingen
dc.subjectCurrent mirrorsen
dc.subjectLinearityen
dc.subjectLow Gm OTA.en
dc.subjectPower demanden
dc.subjectResistanceen
dc.subjectResistorsen
dc.subjectTransconductanceen
dc.subjectTransistorsen
dc.titleHigh-linearity tunable low-Gm transconductor based on bootstrappingen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeArtículo / Artikuluaes
dc.contributor.departmentIngeniería Eléctrica, Electrónica y de Comunicaciónes_ES
dc.contributor.departmentIngeniaritza Elektrikoa, Elektronikoa eta Telekomunikazio Ingeniaritzaeu
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessen
dc.rights.accessRightsAcceso abierto / Sarbide irekiaes
dc.embargo.terms2022-06-21
dc.identifier.doi10.1109/TCSII.2021.3090983
dc.relation.publisherversionhttps://doi.org/10.1109/TCSII.2021.3090983
dc.type.versioninfo:eu-repo/semantics/acceptedVersionen
dc.type.versionVersión aceptada / Onetsi den bertsioaes


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