High-performance 50μm silicon-based on-chip antenna with high port-to-port isolation implemented by metamaterial and SIW concepts for THz integrated systems

Date

2019

Authors

Alibakhshikenari, Mohammad
Virdee, Bal S.
See, Chan H.
Abd-Alhameed, Raed
Limiti, Ernesto

Director

Publisher

IEEE
Acceso abierto / Sarbide irekia
Contribución a congreso / Biltzarrerako ekarpena
Versión aceptada / Onetsi den bertsioa

Project identifier

  • European Commission/Horizon 2020 Framework Programme/722424/
Impacto
Google Scholar
No disponible en Scopus

Abstract

A novel 50μm Silicon-based on-chip antenna is presented that combines metamaterial (MTM) and substrate integrated waveguide (SIW) technologies for integration in THz circuits operating from 0.28 to 0.30 THz. The antenna structure comprises a square patch antenna implemented on a Silicon substrate with a ground-plane. Embedded diagonally in the patch are two T-shaped slots and the edges of the patch is short-circuited to the ground-plane with metal vias, which convert the structure into a substrate integrated waveguide. This structure reduces loss resulting from surface waves and Silicon dielectric substrate. The modes in the structure can be excited through two coaxial ports connected to the patch from the underside of the Silicon substrate. The proposed antenna structure is essentially transformed to exhibit metamaterial properties by realizing two T-shaped slots, which enlarges the effective aperture area of the miniature antenna and significantly enhances its impedance bandwidth and radiation characteristics between 0.28 THz to 0.3 THz. It has an average gain and efficiency of 4.5dBi and 65%, respectively. In addition, it is a self-isolated structure with high isolation of better than 30dB between the two ports. The on-chip antenna has dimensions of 800x800x60μm3

Description

Keywords

THz integrated systems, Substrate integrated waveguide technologies, THz circuits, T-shaped slot antenna, Dielectric substrate, Silicon-based on-chip antenna, Square patch antenna structure, High port-to-port isolation implementation, Metamaterial, SIW technologies, MTM, Frequency 0.28 THz to 0.3 THz, Size 50.0 mum, Efficiency 65 percent

Department

Ingeniería Eléctrica, Electrónica y de Comunicación / Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren

Faculty/School

Degree

Doctorate program

item.page.cita

M. Alibakhshikenari, B. S. Virdee, C. H. See, R. A. Abd-Alhameed, F. Falcone and E. Limiti, 'High-Performance 50µm Silicon-Based On-Chip Antenna with High Port-to-Port Isolation Implemented by Metamaterial and SIW Concepts for THz Integrated Systems,' 2019 Thirteenth International Congress on Artificial Materials for Novel Wave Phenomena (Metamaterials), 2019, pp. X-023-X-025, doi: 10.1109/MetaMaterials.2019.8900874.

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