Perfect narrowband absorbers using simple lithography-free structures
| dc.contributor.author | Lezaun Capdevila, Carlos | |
| dc.contributor.author | Navajas Hernández, David | |
| dc.contributor.author | Liberal Olleta, Íñigo | |
| dc.contributor.author | Beruete Díaz, Miguel | |
| dc.contributor.department | Ingeniería Eléctrica, Electrónica y de Comunicación | es_ES |
| dc.contributor.department | Ingeniaritza Elektrikoa, Elektronikoa eta Telekomunikazio Ingeniaritza | eu |
| dc.contributor.department | Institute of Smart Cities - ISC | en |
| dc.date.accessioned | 2025-04-16T08:28:24Z | |
| dc.date.available | 2025-04-16T08:28:24Z | |
| dc.date.issued | 2024-10-08 | |
| dc.date.updated | 2025-04-16T08:22:06Z | |
| dc.description.abstract | Light absorption is a key phenomenon for a variety of technologies [1]: radiative cooling, photovoltaics, sensing, communication and camouflaging are just a few examples. These applications demand scalable and compact devices that modulate their absorption spectra, usually engineered using cavities and/or periodic structures acting as resonators. Weak light matter interaction limits the absorption within ultra-compact devices, although epsilon-near-zero (ENZ) materials allows to greatly increase such interaction [2]. The lack of design standardization presents a big gap for designing absorbers. We present a thorough analysis of an arbitrary material on top of a PEC (perfect electric reflector) and a material separated by a spacer from the PEC. We overview the absorption phenomena for different permittivity regions, thicknesses, angles of incidence and polarization. This work helps standardize the design of these absorber configuration. | en |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.citation | Lezaun, C., Navajas, D., Liberal, I., Beruete, M. (2024). Perfect narrowband absorbers using simple lithography-free structures. In ICEAA, 25th International Conference on Electromagnetics in Advanced Applications, ICEAA 2024 (pp. 82-82). IEEE. https://doi.org/10.1109/ICEAA61917.2024.10701973. | |
| dc.identifier.doi | 10.1109/ICEAA61917.2024.10701973 | |
| dc.identifier.isbn | 978-8-3503-6098-1 | |
| dc.identifier.uri | https://academica-e.unavarra.es/handle/2454/54004 | |
| dc.language.iso | eng | |
| dc.publisher | IEEE | |
| dc.relation.publisherversion | https://doi.org/10.1109/ICEAA61917.2024.10701973 | |
| dc.rights | © 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work. | |
| dc.rights.accessRights | info:eu-repo/semantics/openAccess | |
| dc.subject | Perfect absorption | en |
| dc.subject | Impedance | en |
| dc.subject | Light absorption | en |
| dc.subject | Photovoltaic | en |
| dc.subject | Incident angle | en |
| dc.subject | Short-circuit | en |
| dc.subject | Polar angle | en |
| dc.subject | Silicon carbide | en |
| dc.subject | Compact devices | en |
| dc.subject | Transmission line model | en |
| dc.subject | Plasma region | en |
| dc.subject | Perfect reflection | en |
| dc.title | Perfect narrowband absorbers using simple lithography-free structures | en |
| dc.type | info:eu-repo/semantics/conferenceObject | |
| dc.type.version | info:eu-repo/semantics/acceptedVersion | |
| dspace.entity.type | Publication | |
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