Turn-off overvoltage in SiC power electronic converters

Date

2025-03-10

Director

Publisher

IEEE
Acceso abierto / Sarbide irekia
Contribución a congreso / Biltzarrerako ekarpena
Versión aceptada / Onetsi den bertsioa

Project identifier

  • AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2022-142791OB-I00/ES/ recolecta
  • AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/TED2021-132604B-I00/
Impacto
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No disponible en Scopus

Abstract

In power electronics converters, understanding the semiconductor turn-off process is key. During turn-off, the semiconductor withstands the bus voltage plus the overvoltage produced in the parasitic inductances and due to the di/dt in the turn-off. In SiC MOSFET turn-off, this overvoltage is critical since these devices operate with higher di/dt and can be operated with blocking voltage close to their breakdown voltage. In this paper, a simple equation-based procedure that allows for an accurate overvoltage calculation in SiC MOSFET turn-off is presented. The proposed step-by-step procedure is applied to calculate the overvoltage during the turn-off of the SiC module CAB016M12FM3 for different gate resistors and switched currents. This analysis can be used to select the correct value of the gate resistor. The obtained results are validated by comparison with LTspice simulation results.

Description

Keywords

Hard turn-off switching, No-Channel-Switching, Semiconductor overvoltage, SiC

Department

Ingeniería Eléctrica, Electrónica y de Comunicación / Ingeniaritza Elektrikoa, Elektronikoa eta Telekomunikazio Ingeniaritza

Faculty/School

Degree

Doctorate program

item.page.cita

Galdeano, M., Barrios, E. L., Elizondo, D., Sanchis, P. (2024) Turn-off overvoltage in SiC power electronic converters. In IECON 2024 - 50th Annual Conference of the IEEE Industrial Electronics Society: (pp. 1-6). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/IECON55916.2024.10905735

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