Turn-off overvoltage in SiC power electronic converters

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dc.contributor.authorGaldeano Bujanda, Mikel
dc.contributor.authorBarrios Rípodas, Ernesto
dc.contributor.authorElizondo Martínez, David
dc.contributor.authorSanchis Gúrpide, Pablo
dc.contributor.departmentIngeniería Eléctrica, Electrónica y de Comunicaciónes_ES
dc.contributor.departmentIngeniaritza Elektrikoa, Elektronikoa eta Telekomunikazio Ingeniaritzaeu
dc.date.accessioned2025-08-12T06:23:02Z
dc.date.available2025-08-12T06:23:02Z
dc.date.issued2025-03-10
dc.date.updated2025-08-12T06:14:21Z
dc.description.abstractIn power electronics converters, understanding the semiconductor turn-off process is key. During turn-off, the semiconductor withstands the bus voltage plus the overvoltage produced in the parasitic inductances and due to the di/dt in the turn-off. In SiC MOSFET turn-off, this overvoltage is critical since these devices operate with higher di/dt and can be operated with blocking voltage close to their breakdown voltage. In this paper, a simple equation-based procedure that allows for an accurate overvoltage calculation in SiC MOSFET turn-off is presented. The proposed step-by-step procedure is applied to calculate the overvoltage during the turn-off of the SiC module CAB016M12FM3 for different gate resistors and switched currents. This analysis can be used to select the correct value of the gate resistor. The obtained results are validated by comparison with LTspice simulation results.en
dc.description.sponsorshipThis work is part of the Projects PID2022-142791OB-I00 and TED2021-132604B-I00 funded by MICIU/AEI /10.13039/501100011033, by ERDF/EU and by the European Union NextGenerationEU/PRTR. It has also been supported by Ingeteam Power Technology.
dc.format.mimetypeapplication/pdf
dc.identifier.citationGaldeano, M., Barrios, E. L., Elizondo, D., Sanchis, P. (2024) Turn-off overvoltage in SiC power electronic converters. In IECON 2024 - 50th Annual Conference of the IEEE Industrial Electronics Society: (pp. 1-6). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/IECON55916.2024.10905735
dc.identifier.doi10.1109/IECON55916.2024.10905735
dc.identifier.isbn978-1-6654-6455-0
dc.identifier.urihttps://academica-e.unavarra.es/handle/2454/54655
dc.language.isoeng
dc.publisherIEEE
dc.relation.ispartofIn IECON 2024 - 50th Annual Conference of the IEEE Industrial Electronics Society: Piscataway: Institute of Electrical and Electronics Engineers Inc.; 2024. p. 1-6
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2022-142791OB-I00/ES/
dc.relation.projectIDinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/TED2021-132604B-I00/
dc.relation.publisherversionhttps://doi.org/10.1109/IECON55916.2024.10905735
dc.rights© 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work.
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.subjectHard turn-off switchingen
dc.subjectNo-Channel-Switchingen
dc.subjectSemiconductor overvoltageen
dc.subjectSiCen
dc.titleTurn-off overvoltage in SiC power electronic convertersen
dc.typeinfo:eu-repo/semantics/conferenceObject
dc.type.versioninfo:eu-repo/semantics/acceptedVersion
dspace.entity.typePublication
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relation.isAuthorOfPublication.latestForDiscovery85979913-47c3-472f-804b-a21e6e1204ec

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