Publication:
Silicon-based 0.450-0.475 THz series-fed double dielectric resonator on-chip antenna array based on metamaterial properties for integrated-circuits

Date

2019

Authors

Alibakhshikenari, Mohammad
Virdee, Bal S.
See, Chan H.
Abd-Alhameed, Raed
Limiti, Ernesto

Director

Publisher

IEEE
Acceso abierto / Sarbide irekia
Contribución a congreso / Biltzarrerako ekarpena
Versión aceptada / Onetsi den bertsioa

Project identifier

European Commission/Horizon 2020 Framework Programme/722424openaire

Abstract

The antenna array designed to operate over 0.450-0.475 Terahertz comprises two dielectric resonators (DRs) that are stacked vertically on top of each other and placed on the surface of the slot antenna fabricated on a silicon substrate using standard CMOS technology. The slot created in the silicon substrate is meandering and is surrounded by metallic via-wall to prevent energy dissipation. The antenna has a maximum gain of 4.5dBi and radiation efficiency of 45.7% at 0.4625 THz. The combination of slot and vias transform the antenna to a metamaterial structure that provides a relatively small antenna footprint. The proposed series-fed double DRs on-chip antenna array is useful for applications in THz integrated circuits.

Description

Keywords

CMOS, Dielectric resonator antenna (DRA), Millimeter wave, Terahertz, On-chip antenna, Silicon

Department

Ingeniería Eléctrica, Electrónica y de Comunicación / Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren

Faculty/School

Degree

Doctorate program

item.page.cita

M. Alibakhshikenari, B. S. Virdee, C. H. See, R. A. Abd-Alhameed, F. Falcone and E. Limiti, 'Silicon-Based 0.450-0.475 THz Series-Fed Double Dielectric Resonator On-Chip Antenna Array Based on Metamaterial Properties for Integrated-Circuits,' 2019 Thirteenth International Congress on Artificial Materials for Novel Wave Phenomena (Metamaterials), Rome, Italy, 2019, pp. X-026-X-028, doi: 10.1109/MetaMaterials.2019.8900949.

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