Publication:
Silicon-based 0.450-0.475 THz series-fed double dielectric resonator on-chip antenna array based on metamaterial properties for integrated-circuits

dc.contributor.authorAlibakhshikenari, Mohammad
dc.contributor.authorVirdee, Bal S.
dc.contributor.authorSee, Chan H.
dc.contributor.authorAbd-Alhameed, Raed
dc.contributor.authorFalcone Lanas, Francisco
dc.contributor.authorLimiti, Ernesto
dc.contributor.departmentIngeniería Eléctrica, Electrónica y de Comunicaciónes_ES
dc.contributor.departmentIngeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzareneu
dc.date.accessioned2020-05-21T09:23:41Z
dc.date.available2020-11-14T00:00:20Z
dc.date.issued2019
dc.description.abstractThe antenna array designed to operate over 0.450-0.475 Terahertz comprises two dielectric resonators (DRs) that are stacked vertically on top of each other and placed on the surface of the slot antenna fabricated on a silicon substrate using standard CMOS technology. The slot created in the silicon substrate is meandering and is surrounded by metallic via-wall to prevent energy dissipation. The antenna has a maximum gain of 4.5dBi and radiation efficiency of 45.7% at 0.4625 THz. The combination of slot and vias transform the antenna to a metamaterial structure that provides a relatively small antenna footprint. The proposed series-fed double DRs on-chip antenna array is useful for applications in THz integrated circuits.en
dc.description.sponsorshipThis work is partially supported by innovation programme under grant agreement H2020-MSCA-ITN-2016 SECRET-722424 and the financial support from the UK Engineering and Physical Sciences Research Council (EPSRC) under grant EP/E0/22936/1.en
dc.embargo.lift2020-11-14
dc.embargo.terms2020-11-14
dc.format.extent4 p.
dc.format.mimetypeapplication/pdfen
dc.identifier.citationM. Alibakhshikenari, B. S. Virdee, C. H. See, R. A. Abd-Alhameed, F. Falcone and E. Limiti, 'Silicon-Based 0.450-0.475 THz Series-Fed Double Dielectric Resonator On-Chip Antenna Array Based on Metamaterial Properties for Integrated-Circuits,' 2019 Thirteenth International Congress on Artificial Materials for Novel Wave Phenomena (Metamaterials), Rome, Italy, 2019, pp. X-026-X-028, doi: 10.1109/MetaMaterials.2019.8900949.en
dc.identifier.doi10.1109/MetaMaterials.2019.8900949
dc.identifier.isbn978-1-7281-0477-5
dc.identifier.urihttps://academica-e.unavarra.es/handle/2454/36953
dc.language.isoengen
dc.publisherIEEEen
dc.relation.ispartof2019 Thirteenth International Congress on Artificial Materials for Novel Wave Phenomena (Metamaterials): Rome, Italy, 2019, pp. X-026-X-028en
dc.relation.projectIDinfo:eu-repo/grantAgreement/European Commission/Horizon 2020 Framework Programme/722424en
dc.relation.publisherversionhttps://doi.org/10.1109/MetaMaterials.2019.8900949
dc.rights© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work.en
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.subjectCMOSen
dc.subjectDielectric resonator antenna (DRA)en
dc.subjectMillimeter waveen
dc.subjectTerahertzen
dc.subjectOn-chip antennaen
dc.subjectSiliconen
dc.titleSilicon-based 0.450-0.475 THz series-fed double dielectric resonator on-chip antenna array based on metamaterial properties for integrated-circuitsen
dc.typeinfo:eu-repo/semantics/conferenceObject
dc.type.versioninfo:eu-repo/semantics/acceptedVersionen
dc.type.versionVersión aceptada / Onetsi den bertsioaes
dspace.entity.typePublication
relation.isAuthorOfPublication69667b5c-e390-42d4-bc71-9f256c1b7b85
relation.isAuthorOfPublication.latestForDiscovery69667b5c-e390-42d4-bc71-9f256c1b7b85

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