Publication:
Silicon carbide as a material-based high-impedance surface for enhanced absorption within ultra-thin metallic films

Date

2020

Director

Publisher

Optical Society of America
Acceso abierto / Sarbide irekia
Artículo / Artikulua
Versión publicada / Argitaratu den bertsioa

Project identifier

AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/RTI2018-093714-J-I00/ES/recolecta
MICIU/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/RYC2018-024123-I

Abstract

The absorption of infrared radiation within ultra-thin metallic films is technologically relevant for different thermal engineering applications and optoelectronic devices, as well as for fundamental research on sub-nanometer and atomically-thin materials. However, the maximal attainable absorption within an ultra-thin metallic film is intrinsically limited by both its geometry and material properties. Here, we demonstrate that material-based high-impedance surfaces enhance the absorptivity of the films, potentially leading to perfect absorption for optimal resistive layers, and a fourfold enhancement for films at deep nanometer scales. Moreover, material-based high-impedance surfaces do not suffer from spatial dispersion and the geometrical restrictions of their metamaterial counterparts. We provide a proof-of-concept experimental demonstration by using titanium nanofilms on top of a silicon carbide substrate.

Description

Keywords

Ultra-thin metallic films, Absorptivity, Silicon carbide substrates, Infrarred radiation, Material-based high-impedance surfaces

Department

Institute of Smart Cities - ISC / Ingeniería Eléctrica, Electrónica y de Comunicación / Ingeniaritza Elektrikoa, Elektronikoaren eta Telekomunikazio Ingeniaritzaren

Faculty/School

Degree

Doctorate program

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